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H5N3003P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0007-0200Z (Previous ADE-208-1547A(Z)) Rev.2.00 Aug.01.2003
Features
* Low on-resistance * Low leakage current * High Speed Switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Aug.01.2003, page 1 of 9
H5N3003P
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch
Note2 Note1
Ratings 300 30 40 160 40 160 30 150 0.833 150 -55 to +150
Unit V V A A A A A W C /W C C
ch-c Tch Tstg
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Tch 150C
Rev.2.00, Aug.01.2003, page 2 of 9
H5N3003P
Electrical Characteristics
(Ta = 25C)
Item Symbol Min 300 -- -- 3.0 20 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max -- 1 0.1 4.0 -- Unit V A A V S Test Conditions ID = 10mA, VGS = 0 VDS = 300V, VGS = 0 VGS = 30V, VDS = 0 VDS = 10V, ID = 1mA ID = 20A, VDS = 10VNote4 ID = 20A, VGS= 10VNote4 VDS = 25V VGS = 0 f = 1MHz ID= 20A RL = 7.5 VGS = 10V Rg=10 VDD = 240V VGS = 10V ID = 40A IF = 40A, VGS = 0 IF = 40A, VGS = 0 diF/dt=100A/s
Drain to source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF
0. 069 -- -- -- -- -- -- -- -- -- -- 1.5 -- -- pF pF pF ns ns ns ns nC nC nC V ns C
Body-drain diode reverse recovery trr time Body-drain diode reverse recovery Qrr charge Notes: 4. Pulse test
Rev.2.00, Aug.01.2003, page 3 of 9
H5N3003P
Main Characteristics
Power vs. Temperature Derating 200 Maximum Safe Operation Area
1000 300
Pch (W)
ID (A)
150
100 30 10 3 1 this area is 0.3 0.1
Operation in limited by RDS(on)
PW
DC Op er
Channel Dissipation
=
1m
10
(T
10
s
1s
0 s s
10
Drain Current
100
m
at
ion
s(
25
ho
c=
t)
50
C )
Ta = 25C 1 30 3 10 100 300 1000 Drain to Source Voltage VDS (V)
0
50
100
150 Tc (C)
200
Case Temperature
Typical Output Characteristics 100 10 V 8V 100 7V Pulse Test 6V 60 5.5 V
Typical Transfer Characteristics VDS = 10 V Pulse Test
ID (A)
ID (A) Drain Current
80
80
60
Drain Current
40
40 Tc = 75C 20
25C -25C 2 4 6 Gate to Source Voltage 8 10 VGS (V)
20
VGS = 5 V
0
4 8 12 Drain to Source Voltage
16 20 VDS (V)
0
Rev.2.00, Aug.01.2003, page 4 of 9
H5N3003P
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source Saturation Voltage VDS(on) (V)
Pulse Test
4
3
I D = 40 A
2 20 A 1 10 A
Drain to Source on State Resistance RDS(on) ()
5
Static Drain to Source on State Resistance vs. Drain Current 0.2 Pulse Test VGS = 10 V,15 V 0.1
0.05
0.02
0
0.01 12 4 8 Gate to Source Voltage 16 20 VGS (V) 1 2 5 10 20 50 Drain Current ID (A) 100
Static Drain to Source on State Resistance RDS(on) ()
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test 0.16 V GS = 10 V I D = 40 A
Forward Transfer Admittance vs. Drain Current 100 50 Tc = -25C 20 10 5 75C 2 1 0.5 0.2 0.2 0.5 1 2 5 V DS = 10 V Pulse Test 10 20 ID (A) 50 100 25C
0.12 20 A 0.08 10 A
0.04 0 -40
0 40 80 120 Case Temperature Tc (C)
160
Drain Current
Rev.2.00, Aug.01.2003, page 5 of 9
H5N3003P
Body-Drain Diode Reverse Recovery Time 1000
50000 20000
Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss
Reverse Recovery Time trr (ns)
500
Capacitance C (pF)
10000 5000 2000 1000 500 200 100 50
200 100 50
Coss
20 10 0.1
di / dt = 100 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current IDR (A)
Crss 0 20 40 60 Drain to Source Voltage 80 100 VDS (V)
Dynamic Input Characteristics
VGS (V)
500
VDS (V)
I D = 40 A VGS
20
10000
Switching Characteristics V GS = 10 V, V DD = 150 V PW = 10 s, duty < 1 % R G =10
400 V DS = 50 V 100 V 240 V VDD
16
Switching Time t (ns)
Gate to Source Voltage
Drain to Source Voltage
1000
tf t d(off)
tr
300
12
200
8
100
tf t d(on) tr
100
V DS = 240 V 100 V 50 V 40 80 120 160 Gate Charge Qg (nC)
4 0 200
0
10 0.1
0.3
1 3 Drain Current
10 30 ID (A)
100
Rev.2.00, Aug.01.2003, page 6 of 9
H5N3003P
Reverse Drain Current vs. Source to Drain Voltage 100
IDR (A) Gate to Source Cutoff Voltage V GS(off) (V)
Gate to Source Cutoff Voltage vs. Case Temperature 5 V DS = 10 V I D = 10mA
80 V GS = 0 V
4
Reverse Drain Current
60
3 1mA 2 0.1mA
40 10 V 5V Pulse Test 0 0.4 0.8 1.2 1.6 2.0
20
1 0 -50
0
50
100
150 Tc (C)
200
Source to Drain Voltage
VSD (V)
Case Temperature
Switching Time Test Circuit Vin Monitor D.U.T. RL 10 Vin 10 V V DD = 150 V Vin Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
Rev.2.00, Aug.01.2003, page 7 of 9
H5N3003P
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 0.833C/W, Tc = 25C
PDM
D=
PW T
0.03
0.02 1 0.0
PW T
0.01 10
1s
t ho
pu
lse
100
1m
100 m 10 m Pulse Width PW (s)
1
10
Rev.2.00, Aug.01.2003, page 8 of 9
H5N3003P
Package Dimensions
As of January, 2003
5.0 0.3 15.6 0.3 1.0
3.2 0.2
4.8 0.2 1.5
Unit: mm
0.5
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8 18.0 0.5
1.0 0.2
2.0
0.6 0.2
3.6
0.9 1.0
5.45 0.5
5.45 0.5
Package Code JEDEC JEITA Mass (reference value) TO-3P -- Conforms 5.0 g
Rev.2.00, Aug.01.2003, page 9 of 9
0.3
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